Which risk significantly increases if a bipolar junction transistor's (BJT) base current exceeds design limits from parasitic capacitance during rapid switching?

A)Thermal runaway accelerates exponentially ✓

B)Increased reverse saturation leakage

C)Collector-emitter voltage breakdown

D)Reduced sensitivity to temperature

💡 Explanation

Thermal runaway becomes likely because increased base current causes higher collector current, thus increased power dissipation raises the junction teperature and elevates collector current via positive feedback. Therefore overheating leads to thermal runaway because of the sensitive physics of BJT operation rather then simple voltage breakdown.

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Which risk significantly increases if a bipolar junction transistor's (BJT) base current exceeds design limits from parasitic capacitance during rapid switching?

💡 Explanation

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