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Which risk significantly increases when doping a silicon crystal?

A)Increased electron mobility and saturation
B)Augmented probability of Auger recombination
C)Decreased bandgap energy and resistivity
D)Prolonged Shockley-Read-Hall recombination lifetime

💡 Explanation

Doping enhances electron-hole pair creation, increasing the odds for Auger recombination because energy from electron-hole recombination is transferred to another electron. Therefore, the Auger effect becomes more probable rather than SRH decreasing, without directly addressing either electron mobility or affecting bandgap specifically.

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