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Which stability risk increases when parasitic capacitance oscillates undamped?

A)Gate oxide breakdown susceptibility
B)Electromigration critical current density
C)Thermal runaway threshold lowers
D)Reverse recovery charge decreases

💡 Explanation

Gate dielectric breakdown increases because transient voltage stress exceeds limits via resonant TRANSFER, amplifying peak field strength; therefore the gate is compromised, rather than heat or current effects dominating at high frequencies.

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