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Within a MOSFET transistor with overly thin gate oxide, which outcome results from manufacturing variations?

A)Increased gate leakage current
B)Reduced channel mobility.
C)Higher threshold voltage.
D)Suppressed subthreshold conduction.

💡 Explanation

Increased gate leakage current occurs due to quantum tunneling because electrons pass through the thin oxide layer, rather than being blocked; therefore, higher leakage results, rather than improved MOSFET performance or altered electrical characteristics.

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