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What electrical behavior change exists when applying high pressure to an indium antimonide crystal?

A)Increased piezoelectric charge accumulation
B)Semiconductor to metal transition
C)Spontaneous magnetic domain formation
D)Enhanced thermoelectric power generation

💡 Explanation

High pressure reduces interatomic spacing, widening valence bands and closing the band gap; because band overlap happens, electron mobility sharply increases via the semiconductor to metal transition, therefore conductivity shifts abruptly, rather than generating other properties.

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