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Which condition hinders gate dielectric scaling due to increased quantum effects?

A)Oxide thickness reduction
B)Higher channel doping levels
C)Lower operating temperature
D)Increased gate voltage swing

💡 Explanation

Decreasing oxide thickness increases electron tunneling through the insulating layer, leading to off-state leakage. This increased **quantum tunneling** impacts device performance because electrons pass through the barrier, therefore compromising insulation gate functionality, rather than insulating effectively under bias.

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