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Which consequence results when exceeding gallium arsenide (GaAs) drift velocity?

A)Increased avalanche breakdown probability
B)Reduced tunneling effect dominance
C)Negative differential resistance onset
D)Enhanced thermal runaway protection

💡 Explanation

Traveling faster causes an onset of "negative differential resistance" in GaAs, because electrons scatter to higher energy valleys with lower mobility. Therefore, current decreases with higher voltage, rather than remaining constant. This reduces amplifier gain.

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