Which consequence results when gate oxide breakdown in MOSFETs?

💡 Explanation

Gate oxide breakdown causes electron tunneling across the thin insulating layer, thus increasing unwanted leakage current, because of Fowler-Nordheim tunneling rather than ideal MOSFET operation. Therefore static power consumption increases rather than signal amplification occurring.

• Which risk increases when an electron's de Broglie wavelength approaches transistor gate oxide thickness?
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