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Which consequence results when gate oxide degrades nano-transistors?

A)Increased electron quantum tunneling rate
B)Reduced channel carrier mobility
C)Greater capacitance gate leakage
D)Higher transistor threshold voltage

💡 Explanation

Increased gate voltage induces electron tunneling through thinned oxide, because the potential barrier shrinks, leading to higher probabilities. This causes increased tunneling rate, rather than decreased mobility, therefore it increases gate leakage, rather than threshold.

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