Which consequence results when reverse recovery current overwhelms clamp diodes in Insulated Gate Bipolar Transistors (IGBTs)?

💡 Explanation

Thermal runaway initiates because parasitic bipolar action raises transistor temperature, due to increased collector current, therefore reducing its blocking voltage, rather than causing direct gate or frequency changes, under clamp circuit failure.

• Which risk increases when excessive cylinder bore distortion occurs in an internal combustion engine?
• Which outcome occurs when pressure transients exceed valve response time during emergency hydraulic actuator shutdown?
• Which risk increases significantly when a turboprop aircraft's landing gear fails to fully lock?
• Which outcome occurs during heavy lathe cutting when exceeding vibration limits?
• Which risk increases when a supervisory control system using a SCADA architecture experiences network congestion?
• Which outcome occurs when a fiber optic transceiver's clock recovery circuit experiences excessive jitter?