Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← TechnologyWhich consequence results when the p-n junction in silicon avalanche diodes experiences high reverse voltage and temperature?
A)Increased carrier recombination velocity
B)Dielectric breakdown causing permanent damage✓
C)Reduced reverse saturation current
D)Enhanced forward bias conduction
💡 Explanation
Dielectric breakdown leads to permanent damage because when the electric field across the depletion region exceeds the breakdown voltage, impact ionization creates excessive carriers. This positive feedback in the avalanche multiplication process triggers heat generation and therefore melts the device, rather than merely increasing conductivity.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Technology →- Which outcome occurs when particulate filters excessively back-pressure modern diesel fuel injection?
- Which consequence results when a jet aircraft experiences a jammed elevator control surface?
- Which outcome occurs when a bypass valve experiences rapid cycling?
- Which outcome occurs when ground effect is lost during a precision landing?
- Which limit causes increased crosstalk impairment when multi-mode fiber optic cables transmit at higher bandwidth using wavelength division multiplexing (WDM)?
- Which limitation arises when an ammonia-based refrigeration evaporator operates below its minimum design temperature?
