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Which effect occurs in a gallium arsenide FET when bias exceeds velocity saturation?

A)Reduced current gain occurs
B)Increased channel resistance develops
C)Real space transfer occurs
D)Kirk effect significantly decreases

💡 Explanation

Applying high electric fields causes electrons to gain enough energy to transfer from the high mobility Γ valley to the low mobility L valley; this is called Real Space Transfer, because the electrons ‘move’ to different energy bands, therefore current reduces rather than increases because mobility falls.

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