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Which failure mode arises in a bipolar junction transistor (BJT) exposed to high-energy neutron radiation?

A)Reduced current gain (β)
B)Increased thermal conductivity
C)Gate oxide breakdown
D)Increased switching speed

💡 Explanation

Radiation damage causes displacement defects, disrupting the crystal lattice because these defects increase the electron-hole recombination rate. This reduces the minority carrier lifetime, thereby lowering the current gain (β), rather than other parameters, since current amplification is highly sensitive to carrier lifetime.

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