Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← TechnologyWhich failure mode arises when drain-source voltage exceeds NMOS limits?
A)Latch-up due to parasitic BJT activation✓
B)Gate oxide breakdown from high field
C)Source follower saturation diminishing gain
D)Substrate current causing thermal runaway
💡 Explanation
Latch-up can occur because exceeding drain-source voltage causes parasitic BJT structures within the NMOS device to activate, therefore unwanted high currents can flow, clamping the output voltage rather than normal transistor behavior.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Technology →- Which risk increases when ambient temperature affects MOSFET threshold voltage?
- Which type of concrete spalling is promoted when reinforcing steel rebar corrodes?
- Which risk increases when rebar is placed too close to the surface in a reinforced concrete pier?
- Which risk increases when robotic arm joint encoders, using incremental quadrature encoding, experience high-frequency vibration while positioning?
- Which mechanism causes flutter in aircraft wings specifically near the speed called Vc, design maneuvering speed?
- Which risk increases when temperature significantly exceeds a power transformer's design limit, and the built-in protection breaker fails?
