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Which failure mode arises when drain-source voltage exceeds NMOS limits?

A)Latch-up due to parasitic BJT activation
B)Gate oxide breakdown from high field
C)Source follower saturation diminishing gain
D)Substrate current causing thermal runaway

💡 Explanation

Latch-up can occur because exceeding drain-source voltage causes parasitic BJT structures within the NMOS device to activate, therefore unwanted high currents can flow, clamping the output voltage rather than normal transistor behavior.

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