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Which increased outcome results when an electron's energy is briefly below the required minimum through a MOS capacitor's silicon dioxide insulating layer?

A)Increased transistor leakage current
B)Improved gate oxide breakdown
C)Higher channel carrier mobility
D)Reduced threshold voltage variation

💡 Explanation

Increased transistor leakage current occurs because quantum tunnelling allows electrons to pass through the forbidden energy gap. Therefore, leakage increases, rather than improvement to the gate, because carriers tunnel through given sufficient potential.

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