Which mechanism allows hydrogen fluoride to etch silicon dioxide in semiconductor manufacturing?

💡 Explanation

When HF contacts SiO2, fluoride ions initiate nucleophilic attack on silicon atoms, forming hexafluorosilicate complexes because fluoride's small size and high electronegativity stabilize this bonding arrangement. Therefore fluoride complex is formed, rather than protonation or hydrogen bonding effects that are less dominant chemical drivers for dissolution.

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