Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← ScienceWhich mechanism causes increased electron mobility in graphene-oxide FET sensors at elevated temperatures?
A)Enhanced thermal electron hopping✓
B)Increased phonon scattering events
C)Reduced surface defect recombination
D)Increased gate dielectric capacitance
💡 Explanation
Increased thermal energy excites electrons by enhanced thermal electron hopping, allowing easier movement between localized states. This increases the overall electron mobility because thermal hops promote conduction, rather than trapping or recombination at defects.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Science →- Which consequence results when localized corrosion compromises an ionic conduction path?
- Which outcome occurs when a pulsed laser anneals polysilicon?
- Which outcome limits electron flow within silicon-based transistors?
- Which consequence most directly expands observed spacetime when approaching a black hole?
- Which consequence results when a catalytic convertor is fouled by lead?
- Which outcome affects magnetic confinement fusion when excessive radiative energy escapes?
