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Which mechanism changes resistivity in piezoresistive single crystal silicon?

A)Stress inducing band structure changes
B)Phonon scattering reducing carrier mobility
C)Dopant atoms becoming self-compensated
D)Thermal expansion increasing grain boundary defects

💡 Explanation

Stress changes the band structure and effective mass because this influences the availability of energy states for charge carriers, resulting in a change in resistivity as demonstrated by the piezoresistive effect, therefore option A rather than changes due to phonon scattering, dopant compensation or grain distortions.

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