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Which mechanism dominates when electrons pass silicon dioxide in flash memory?

A)Fowler-Nordheim tunneling
B)Thermionic emission
C)Drift-diffusion transport
D)Space charge conduction

💡 Explanation

Electrons cross the thin insulating layer via Fowler-Nordheim tunneling because a high electric field reduces the barrier width, therefore electrons tunnel rather than overcome the barrier thermally because the potential difference is primarily quantum mechanical.

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