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Which mechanism explains electron movement through oxide layers when applying voltage?

A)Quantum tunneling through potential barrier
B)Thermal excitation above barrier energy
C)Defect-mediated classical drift-diffusion
D)Polaron hopping between localized sites

💡 Explanation

Quantum tunneling permits electrons to probabilistically pass across the forbidden band gap of the insulating oxide barrier, because the electron's wave function doesn't stop at the barrier. Therefore, tunneling explains conduction rather than thermal excitation and classical drift.

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