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Which mechanism hinders data retention in nanoscale flash memory?

A)Quantum tunneling discharges the floating gate.
B)Channel hot electron injection degrades oxide.
C)Impact ionization causes charge leakage.
D)Fowler-Nordheim injection increases cell voltage.

💡 Explanation

Quantum tunneling discharges the floating gate because trapped electrons overcome the oxide barrier via tunneling, therefore, the stored charge leaks away more quickly, rather than other competing high voltage degradation mechanism.

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