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Which mechanism limits the switching speed improvements from decreasing capacitance of integrated circuit transistors?

A)Increased gate leakage current
B)Reduced drain saturation voltage
C)Elevated channel thermal resistance
D)Quantum tunneling through gate oxide

💡 Explanation

When capacitance is decreased, the voltage changes occur faster for a given current, but gate leakage current, driven by electric field and quantum effects, becomes a proportionally larger factor and limit switching performance because this current is fixed. Therefore gate leakage limits improvements, rather than saturation, thermal resistance, or quantum tunneling, which are mitigated through fabrication.

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