Which outcome occurs to transistor channel current when gate dielectric thickness approaches the quantum tunneling limit?

A)Gate leakage current abruptly increases✓

B)Drain current increases linearly instead

C)Subthreshold swing reaches zero quickly

D)Threshold voltage becomes fully negative

💡 Explanation

Gate leakage current increases exponentially because quantum tunneling allows electrons to pass through the ultra-thin gate dielectric. This increase occurs because of tunneling, therefore gate leakage is much higher rather than controlled channel modulation seen typically.

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Which outcome occurs to transistor channel current when gate dielectric thickness approaches the quantum tunneling limit?

💡 Explanation

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