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Which outcome occurs when a semiconductor's crystal lattice contains impurities causing localized Mid-Gap states during electron excitation?

A)Increased radiative electron-hole recombination
B)Enhanced electron mobility due to band bending
C)Reduced non-radiative electron capture cross-section
D)Accelerated electron de-trapping kinetics

💡 Explanation

When mid-gap states exist and electrons are excited, increased electron-hole recombination occurs because these states act as stepping stones for electrons to lose energy radiatively, decreasing efficiency. Therefore increased radiative recombination results, rather than mobility changes or de-trapping, which involve other mechanisms

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