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Which outcome occurs when applying reverse bias across TIN tunnel diode?

A)Increased electron flow with voltage.
B)Decreased avalanche breakdown probability.
C)Reduced Zener effect dominance.
D)Enhanced gate oxide capacitance.

💡 Explanation

Applying reverse bias causes increased electron flow because Quantum tunneling allows electrons to pass through the potential barrier. Therefore tunneling is enhanced, rather than avalanche breakdown, which requires higher voltages and different mechanisms.

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