Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← TechnologyWhich outcome occurs when electrostatic discharge bypasses ESD diode clamping?
A)Junction breakdown with increased leakage✓
B)Improved gate oxide layer integrity
C)Reduced channel electron mobility loss
D)Enhanced CMOS circuit noise immunity
💡 Explanation
Junction breakdown occurs due to exceeding the junction's reverse bias voltage, because avalanche multiplication leads to high reverse current. Therefore, the junction overheats and degrades performance, rather than improving device characteristics because the applied voltage exceeds maximum specifications.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Technology →- Which programming error results when a PLC loses encoder counts during rapid robotic arm movements?
- Which risk increases when lateral soil pressure exceeds the design tolerance of underground concrete columns in a braced excavation?
- Which consequence results when a robotic arm's force sensor gives corrupted feedback?
- Which risk increases when setting extremely tight tolerances in CNC machining?
- Which risk increases when Kalman filter sensor fusion estimates in robotics degrade due to unexpected dynamics noise?
- Which risk increases when exceeding design limits for connecting rod angularity relative to the crankshaft?
