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Which outcome occurs when electrostatic discharge bypasses ESD diode clamping?

A)Junction breakdown with increased leakage
B)Improved gate oxide layer integrity
C)Reduced channel electron mobility loss
D)Enhanced CMOS circuit noise immunity

💡 Explanation

Junction breakdown occurs due to exceeding the junction's reverse bias voltage, because avalanche multiplication leads to high reverse current. Therefore, the junction overheats and degrades performance, rather than improving device characteristics because the applied voltage exceeds maximum specifications.

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