Which outcome occurs when excessive gate leakage current affects a nanoscale flash memory cell?

💡 Explanation

Decreased data retention is caused by electrons leaking from the floating gate through quantum tunneling. Because electrons tunnel through the oxide rather than being confined, trapped charge diminishes, therefore shortening the data retention; faster performance becomes unimportant.

• Which consequence occurs when exceeding a hydraulic turbine's design flow?
• Which risk increases when a capacitor bank's discharge waveform exhibits ringing?
• Which outcome results when a chemical reactor operates above heat transfer limits?
• Which outcome results when a viscous fluid exceeds Reynolds number limits moving through hydraulic systems?
• Which mechanism limits electron mobility in a semiconductor's inversion layer at cryogenic temperatures?
• Which outcome occurs when thermal energy availability declines powering a Stirling engine cycle?