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Which outcome occurs when increased gate voltage in MOSFET affects electron flow?

A)Quantum tunneling limits channel resistivity
B)Increased electron-phonon scattering heats die
C)Franz-Keldysh effect modulates light emission
D)Electron avalanche creates dielectric breakdown

💡 Explanation

Quantum tunneling limits reach when electrons can cross the gate oxide barrier, because *quantum tunneling* increases due to the field, therefore gate leakage increases rather than electron scattering.

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