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Which outcome results from electron starvation in nanoscale transistors?

A)Increased gate leakage current
B)Reduced channel mobility occurs
C)Enhanced subthreshold conduction
D)Greater drain voltage swing

💡 Explanation

Increased gate leakage current occurs because quantum tunneling allows electrons to penetrate the thin gate oxide layer, a process named Fowler-Nordheim tunneling; therefore gate currents rise, rather than performance increasing under ideal transistor operation scenarios.

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