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Which outcome occurs when integrated circuit's temperature exceeds thermal resistance constant limits derived from Arrhenius equation?

A)Metallization failure due to electromigration
B)Substrate cracking from thermal expansion
C)Gate oxide breakdown from hot carrier injection
D)Increased leakage current due to bandgap narrowing

💡 Explanation

When the operational temperature of an IC exceeds limits set by its thermal resistance constant derived from the Arrhenius equation, it enhances diffusion processes because exponential temperature relationship with reaction rates becomes prominent, causing electromigration. Therefore metallization failure results, rather than substrate cracking, gate oxide breakdown or increased leakage, each require distinct mechanisms.

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