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← ScienceWhich outcome occurs when thermal energy disrupts silicon crystal structure?
A)Increased intrinsic carrier concentration arises✓
B)Decreased electron-hole recombination rate
C)Increased crystal lattice periodicity results
D)Decreased material band-gap energy occurs
💡 Explanation
Increased thermal energy disrupts the lattice, increasing *thermal excitation* of electrons freeing them, because more electrons achieve energies exceeding the reduced bandgap, therefore more carriers form, rather than decreased recombination due to increased defect density weakening crystal structure.
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