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Which outcome occurs when thermal energy disrupts silicon crystal structure?

A)Increased intrinsic carrier concentration arises
B)Decreased electron-hole recombination rate
C)Increased crystal lattice periodicity results
D)Decreased material band-gap energy occurs

💡 Explanation

Increased thermal energy disrupts the lattice, increasing *thermal excitation* of electrons freeing them, because more electrons achieve energies exceeding the reduced bandgap, therefore more carriers form, rather than decreased recombination due to increased defect density weakening crystal structure.

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