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Which outcome results in a semiconductor when interstitial impurities disrupt a crystal?

A)Decreased electron-hole recombination probability
B)Increased thermal conductivity limits
C)Shifted Fermi energy levels
D)Enhanced intrinsic carrier concentration

💡 Explanation

Interstitial impurities introduce energy states within the band gap; this causes a shift in the Fermi level because electrons will populate creating n-type or p-type semiconductors, therefore conduction properties change, rather than electron-hole recombination which relies on other factors.

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