Which outcome results when a GaN transistor's drain-source voltage exceeds its rated voltage under pulsed operation?

💡 Explanation

Hot carrier injection causes device degradation; high electric fields accelerate carriers into the gate oxide, creating interface traps. This is because energy band bending increases, promoting hot carriers to surmount barriers, therefore increasing gate leakage current rather than any self-limiting effect; other effects are negligible at said voltage.

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