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Which outcome results when gate oxide insulating layer dielectric experiences increased electron tunneling?

A)Increased standby power drain
B)Improved transistor switching speed
C)Reduced short channel effects
D)Enhanced electron mobility gain

💡 Explanation

Increased electron tunneling enhances gate leakage and standby power dissipation because electrons pass through the forbidden energy band via Quantum Tunneling, therefore leakage current increases rather than mobility which occurs under other doping conditions.

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