VibraXX
Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter Arena
HomeCategoriesTechnologyQuestion
Question
Technology

Which outcome specifically reduces efficiency when heat increases in a silicon p-n junction?

A)Increased reverse saturation current
B)Enhanced forward voltage drop
C)Decreased electron-hole recombination
D)Reduced base transport factor

💡 Explanation

Increased temperature causes enhanced thermal generation of electron-hole pairs, thus increasing the reverse saturation current in the junction, because depletion region resistance decreases. Therefore, leakage power dissipation is increased, rather than efficient amplification obtained under normal operating conditions.

🏆 Up to £1,000 monthly prize pool

Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.

⚡ Enter Arena

Related Questions

Browse Technology