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← TechnologyWhich outcome specifically reduces efficiency when heat increases in a silicon p-n junction?
A)Increased reverse saturation current✓
B)Enhanced forward voltage drop
C)Decreased electron-hole recombination
D)Reduced base transport factor
💡 Explanation
Increased temperature causes enhanced thermal generation of electron-hole pairs, thus increasing the reverse saturation current in the junction, because depletion region resistance decreases. Therefore, leakage power dissipation is increased, rather than efficient amplification obtained under normal operating conditions.
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