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← ScienceWhich phenomenon increases when gate oxide films become too thin?
A)Quantum tunneling current leakage✓
B)Joule heating power dissipation
C)Electrostatic discharge device damage
D)Electromigration mean time reduction
💡 Explanation
As gate oxides in transistors shrink, electrons experience increased ability to tunnel through the insulating layer, resulting in quantum tunneling; therefore, leakage current increases, rather than ESD damage, because it dominates before breakdown voltages are reached.
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