VibraXX
Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter Arena
HomeCategoriesScienceQuestion
Question
Science

Which phenomenon increases when gate oxide films become too thin?

A)Quantum tunneling current leakage
B)Joule heating power dissipation
C)Electrostatic discharge device damage
D)Electromigration mean time reduction

💡 Explanation

As gate oxides in transistors shrink, electrons experience increased ability to tunnel through the insulating layer, resulting in quantum tunneling; therefore, leakage current increases, rather than ESD damage, because it dominates before breakdown voltages are reached.

🏆 Up to £1,000 monthly prize pool

Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.

⚡ Enter Arena

Related Questions

Browse Science