Which potential consequence arises given extended duration of a MOSFET operating within a bridge rectifier circuit experiencing significant reverse recovery current?

💡 Explanation

Exceeding the MOSFET's reverse voltage limit causes avalanche breakdown at the drain-body junction; because the MOSFETs are repetitively stressed by reverse current impacting the gate oxide, this induces charge trapping, therefore increasing the risk of gate oxide breakdown rather than improved performance.

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