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Which risk increases when a silicon crystal used in high-power diodes exceeds its specified reverse voltage rating?

A)Avalanche breakdown generates high current
B)Increased thermal runaway from lattice phonons
C)Increased depletion region capacitance occurs
D)Dielectric hardening prevents carrier diffusion

💡 Explanation

The risk of avalanche breakdown increases, because impact ionization releases electron-hole pairs, therefore creating a self-sustaining current. The answer is avalanche breakdown rather than thermal effect, because the scenario described is an immediate electrical effect.

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