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← ScienceWhich risk increases when applying excessive voltage across a MOSFET gate?
A)Gate-oxide dielectric breakdown✓
B)Increased channel mobility
C)Reduced subthreshold swing
D)Faster carrier transit time
💡 Explanation
Excessive voltage can cause gate-oxide dielectric breakdown because it enhances electron tunneling through the gate oxide, leading to a short circuit. Therefore, breakdown is the outcome, rather than enhanced mobility; different voltages influence mobility.
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