Which risk noticeably increases when a gallium-nitride (GaN) transistor's gate voltage exceeds its maximum rated threshold?

💡 Explanation

If the gate voltage exceeds its limit, gate oxide dielectric breakdown occurs because an exceedingly large electric field stresses the gate, creating shorted paths; therefore, current escapes the gate terminal, rather than impacting performance or injecting carriers.

• Which outcome occurs when a pulsed laser ablates microcapacitors?
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• Which outcome occurs when a PCB trace's length increases?