Which risk significantly increases near the glass-to-metal junction in a high-power rectifier diode?

💡 Explanation

Thermal runaway will occur, because local heating increases the junction's conductivity, leading to more current, amplified locally by positive feedback. Therefore, runaway is likely, rather than a uniform affect like lowered voltage drop or avalanche, which occur globally across the semiconductor junction.

• Which consequence results when exceeding surface finish tolerances during progressive die stamping?
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• Which outcome commonly occurs in gallium nitride (GaN) power transistors at high switching frequencies?