Which consequence occurs in silicon when lattice dislocations concentrate impurities?

💡 Explanation

A concentration of impurities in silicon near dislocations causes decreased band gap energy because local strain alters the electronic structure via quantum confinement. This reduces energy needed for electron excitation; therefore band gap decreases, rather than phonon blocking at macroscopic scales.

• Which outcome results when electrons in a scanning tunneling microscope encounter a non-conducting surface?
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• Which outcome causes the energy splitting when degenerate atomic orbitals form molecular bonds?
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