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← ScienceWhich mechanism limits the integration density of flash memory cells during scaling utilizing quantum behavior?
A)Electron tunneling through insulating layers✓
B)Increased parasitic capacitance between cells
C)Reduced channel mobility in smaller transistors
D)Enhanced thermal noise affecting bit readout
💡 Explanation
During scaling, electron tunneling through the insulating layers becomes significant because the reduced barrier width enhances tunneling probability, limiting the ability to confine charge. Therefore electron tunneling results, rather than capacitance, mobility, or noise which depend on classical circuit properties and device geometry.
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