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Which outcome occurs when applying strain to a semiconductor's crystal lattice?

A)The electronic band gap changes.
B)Fermi level remains constant.
C)Trap states near band edges vanish.
D)Impurity diffusion coefficient decreases.

💡 Explanation

Applying strain alters interatomic spacing; the electronic band structure changes through deformation potential, because this modifies electron energy levels therefore the band gap also shifts rather than the unchanged Fermi level under low strain.

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