Which risk increases during gallium arsenide (GaAs) crystal growth with imperfect stoichiometry?

💡 Explanation

Imperfect stoichiometry during GaAs growth affects point defect equilibrium because the Schottky defect mechanism drives the creation of vacancies to compensate for the non-ideal ratio. Therefore, vacancy defects increase, rather than improvements, because stoichiometry must be tightly managed.

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