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Which risk increases when electron mobility slows within a MOSFET?

A)Increased short channel effect
B)Decreased gate oxide breakdown
C)Reduced thermal runaway margin
D)Enhanced drain induced barrier lowering

💡 Explanation

Increased short channel effect occurs because reduced electron mobility hinders drain current control via the gate's electric field; therefore, the channel is less effectively turned off when desired, rather than breakdown or runaway which usually affects conductivity rather than control.

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